| PART |
Description |
Maker |
| FD1000FX-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| DPPS16D56K-F DPPS10D12K-F DPPS10D15K-F DPPS10D18K- |
High Voltage, High Frequency, Ultra High Peak Currents
|
Cornell Dubilier Electr...
http://
Cornell Dubilier Electronics
|
| 2SC2216 2SC2717 E000694 |
From old datasheet system
TRANSISTOR (HIGH FREQUENCY, AM HIGH FREQUENCY AMPLIFIER, AM FREQUENCY CONVERTER APPLICATIONS)
TRANSISTOR (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC941 2SC941-O 2SC941-R 2SC941TM 2SC941-Y 2SC942 |
TRANSISTOR SILICON NPN EPIITAXIAL TYPE 晶体管型硅npn型EPIITAXIAL
SMA MALE TO TNC MALE; 18GHz PRECISION TEST CABLE ASSEMBLY; WIDEBAND COVERAGE DC - 18 GHZ TEST CABLES. FLEXIBLE FOR EASY CONNECTION AND BEND RADIUS
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS)
NPN EPITAXIAL TYPE (HIGH, AM, AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS)
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| EL7515 EL7515IY EL7515IY-T13 EL7515IY-T7 |
PWM, Step Up with High Frequency, VIN >1.8V, VOUT =4.5V-18V
SMPS Controller
High Frequency PWM Step-Up Regulator
|
Intersil Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| HKQ0603W16NH-T |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)
|
Taiyo Yuden (U.S.A.), I...
|
| FD1500CV-90DA |
HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE 高功率，高频率新闻袋
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| HKQ040211NJ-T |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)
|
Taiyo Yuden (U.S.A.), I...
|
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